Japanese Patent JPS6360555

B2

PURPOSE:To obtain a Josephson junction element, the speed of operation thereof is fast, by forming a first superconductive layer consisting of an Nb-Al alloy according to a predetermined pattern onto a substrate and shaping a barrier layer through sputtering treatment in which CF4 gas is used and gas pressure is specified. CONSTITUTION:The substrate 1 consisting of an Si layer, the surface thereof has an oxide film, or sapphire or the like is coated with the first superconductive layer 2 made of an Nb-Al alloy containing approximately 75% Sb and approximately 25% Al alloy in prescried pattern form by using a mask through sputtering. A section in the vicinity of the end section of the layer 2 is coated with a mask, and a layer 3 in which Al is enriched is shaped to the section extending over the side surface from the surface of the layer 2 exposed through sputtering treatment employing CF4 gas under the gas pressure of 0.005-0.5 Torr extending over the side surface from the surface of the layer 2 exposed. The layer 3 is changed into an Al2O3 barrier layer 4, a dielectric constant thereof is extremely low, through oxidizing treatment, and the second superconductive layer 5 composed of Pb, etc. is attached extending over the exposed section of the substrate 1 while coating the layer 4.

JP9612981A

November 24, 1988

June 22, 1981

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H01L39/24

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