Document Type and Number:
Japanese Patent JPWO2021070007
Kind Code:
A1
Abstract:
A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third conductor over the first insulator, a fourth insulator over the second insulator, a fifth insulator over the third insulator and the fourth insulator, a sixth insulator over the fifth insulator, a seventh insulator that is over the oxide and placed between the first conductor and the second conductor, an eighth insulator over the seventh insulator, a third conductor over the eighth insulator, and a ninth insulator over the third conductor and the sixth to eighth insulators. The third conductor includes a region overlapping the oxide. The seventh insulator includes a region in contact with each of the oxide, the first conductor, the second conductor, and the first to sixth insulators. The first insulator, the second insulator, the fifth insulator, and the ninth insulator are each a metal oxide having an amorphous structure.
Application Number:
JP2021550723A
Publication Date:
April 15, 2021
Filing Date:
September 30, 2020
Export Citation:
