Document Type and Number:
Japanese Patent JPWO2022190984
Kind Code:
A1
Abstract:
A first element included in a semiconductor layer differs from a second element included in another semiconductor layer, and a third element included in a source electrode is same as a fourth element included in a gate electrode.
Application Number:
JP2023505337A
Publication Date:
September 15, 2022
Filing Date:
March 02, 2022
Export Citation:
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