256 MEG DYNAMIC RANDOM ACCESS MEMORY

Title:

256 MEG DYNAMIC RANDOM ACCESS MEMORY

Document Type and Number:

Japanese Patent JP2006202484

Kind Code:

A

Abstract:

To realize a high-density memory by an economical method.

This dynamic random memory is provided with a plurality of independent arrays constituted of memory cells and having digit lines extending therethrough, and a plurality of peripheral devices for writing/reading data in the memory cells. The peripheral device is provided with a plurality of sense amplifiers for sensing signals on the digit lines. The sense amplifier is provided with a plurality of peripheral devices controlled by a control signal larger than a data signal written in the memory cell, a power source for generating a plurality of supply voltages, and a power distribution bus for supplying the plurality of supply voltages to the plurality of independent arrays and the peripheral devices.

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Inventors:

KEETH BRENT
BUNKER LAYNE G
DERNER SCOTT J
TAYLOR RONALD L
MULLIN JOHN S
BEFFA RAYMOND J
ROSS FRANK F
KINSMAN LARRY D

Application Number:

JP2006065222A

Publication Date:

August 03, 2006

Filing Date:

March 10, 2006

Export Citation:

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Assignee:

MICRON TECHNOLOGY INC

International Classes:

G11C11/401; G11C5/02; G11C5/06; G11C11/407; G11C11/4074; G11C11/4076; G11C11/409; G11C11/4097; G11C29/04; G11C29/14; H01L21/8242; H01L27/108

Attorney, Agent or Firm:

Toshiyuki Maruyama
Takao Miyano
Koichi Kitazumi

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