Title:
3 level converter half bridge
Document Type and Number:
Japanese Patent JP6196853
Kind Code:
B2
Abstract:
The half-bridge (1) has load current terminals (C) of first and second power semiconductor switches (T1, T3) electrically conductively connected with respective cathode and anode terminals of a diode arrangement (11). Other load current terminals (E) of third and fourth power semiconductor switches (T2, T4) are electrically conductively connected with one of the former load current terminals of the second switch, and another anode terminal of another diode arrangement (10), respectively. An anode of a diode (D1) is electrically conductively connected with a cathode of another diode (D2). The power semiconductor switches are insulated gate bipolar transistors.
Inventors:
Ingo Stout
Arend Windrich
Arend Windrich
Application Number:
JP2013187201A
Publication Date:
September 13, 2017
Filing Date:
September 10, 2013
Export Citation:
Assignee:
SEMIKRON Elektronik GmbH & Co.KG
International Classes:
H02M7/487; H02M7/48
Domestic Patent References:
| JP2006166696A | ||||
| JP2000060140A | ||||
| JP11089249A | ||||
| JP10285950A | ||||
| JP2013143812A |
Attorney, Agent or Firm:
Fujita Akira
Hideki Imai
Hideki Imai
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