Title:
３Ｄ－ＮＡＮＤモールド
Document Type and Number:
Japanese Patent JP7443393
Kind Code:
B2
Abstract:
Methods of manufacturing memory devices are provided. The methods decrease the thickness of the first layers and increase the thickness of the second layers. Semiconductor devices are described having a film stack comprising alternating nitride and second layers in a first portion of the device, the alternating nitride and second layers of the film stack having a nitride:oxide thickness ratio (Nf:Of); and a memory stack comprising alternating word line and second layers in a second portion of the device, the alternating word line and second layers of the memory stack having a word line:oxide thickness ratio (Wm:Om), wherein 0.1(Wm:Om)
Inventors:
Kang, Chang Seok
Tomohiko Kitajima
Srinivasan, Mukun
Natarajan, Sanjay
Tomohiko Kitajima
Srinivasan, Mukun
Natarajan, Sanjay
Application Number:
JP2021558829A
Publication Date:
March 05, 2024
Filing Date:
April 01, 2020
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H10B43/27; H01L21/3065; H01L21/3205; H01L21/336; H01L21/768; H01L29/423; H01L29/49; H01L29/788; H01L29/792; H10B43/50
Domestic Patent References:
| JP2018133590A |
Foreign References:
| CN108922891A | ||||
| CN109155316A | ||||
| US20170062455 | ||||
| US20170278859 | ||||
| US9449985 | ||||
| US20160118403 |
Attorney, Agent or Firm:
Sonoda & Kobayashi Patent Attorneys Corporation