Title:
AC励起マイクロキャビティ放電デバイス及び方法
Document Type and Number:
Japanese Patent JP5301838
Kind Code:
B2
Abstract:
A method for fabricating microcavity discharge devices and arrays of devices. The devices are fabricated by layering a dielectric on a first conducting layer. A second conducting layer or structure is overlaid on the dielectric layer. In some devices, a microcavity is created that penetrates the second conducting layer or structure and the dielectric layer. In other devices, the microcavity penetrates to the first conducting layer. The second conducting layer or structure together with the inside face of the microcavity is overlaid with a second dielectric layer. The microcavities are then filled with a discharge gas. When a time-varying potential of the appropriate magnitude is applied between the conductors, a microplasma discharge is generated in the microcavity. These devices can exhibit extended lifetimes since the conductors are encapsulated, shielding the conductors from degradation due to exposure to the plasma. Some of the devices are flexible and the dielectric can be chosen to act as a mirror.
Inventors:
Eden, Jay Gerry
Shen, Quo Feng
Ostrom, Nels Pee
Park, sun-gin
Shen, Quo Feng
Ostrom, Nels Pee
Park, sun-gin
Application Number:
JP2007556156A
Publication Date:
September 25, 2013
Filing Date:
January 24, 2006
Export Citation:
Assignee:
The Board of Trustees of the University of Illinois
International Classes:
H01J11/12; G01N27/68; H01J9/02; H01J61/92; H01J65/00
Domestic Patent References:
| JP2001526824A | ||||
| JP2004234956A | ||||
| JP8339779A | ||||
| JP2004227990A |
Foreign References:
| US20030080688 | ||||
| WO2007146279A1 |
Attorney, Agent or Firm:
Kimura Mitsuru
Takanori Mamoru
Taiji Morikawa
Amamiya Yasuhito
Kei Sakurada
Yasuyuki Hata
Takanori Mamoru
Taiji Morikawa
Amamiya Yasuhito
Kei Sakurada
Yasuyuki Hata