Title:
半導体平坦化用研磨剤およびその製造方法
Document Type and Number:
Japanese Patent JP4555944
Kind Code:
B2
Abstract:
A polishing slurry for semiconductor planarization containing cerium oxide particles and water, wherein the content of the cerium oxide particles having a diameter of 3 mum or more is 500 ppm or less (weight ratio) in a solid, preferably 100 ppm or less and it is more preferable that D99 (99% by volume of the whole particles in polishing slurry) of the cerium oxide particles is 1 mum or less. The polishing slurry can reduce the generation of scratches, and can polish a surface of the semiconductor substrate in the wiring formation process of semiconductor device precisely at a high speed.
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Inventors:
Kanji Kane
Application Number:
JP2005513167A
Publication Date:
October 06, 2010
Filing Date:
August 11, 2004
Export Citation:
Assignee:
Hitachi Chemical Co., Ltd.
International Classes:
H01L21/304; B24B37/00; C09G1/02; C09K3/14
Domestic Patent References:
| JPH10154673A | 1998-06-09 | |||
| JP2003007660A | 2003-01-10 | |||
| JP2003171653A | 2003-06-20 | |||
| JPH1112561A | 1999-01-19 | |||
| JP2002203819A | 2002-07-19 | |||
| JP2002212544A | 2002-07-31 | |||
| JP2003082333A | 2003-03-19 | |||
| JP2003188122A | 2003-07-04 |
Attorney, Agent or Firm:
Hidekazu Miyoshi
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