Title:
ACOUSTIC INDUCTION TYPE SEMICONDUCTOR ELEMENT AND ACOUSTIC ELEMENT INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JP2023062603
Kind Code:
A
Abstract:
To provide an acoustic induction type semiconductor element and an acoustic element integrated circuit capable of having higher sensitivity even when a size of the element is miniaturized.SOLUTION: An acoustic induction type semiconductor element includes a p-type channel formation region 14, first and second main electrode regions 15b, 15a that are n-type and provided on a surface of the channel formation region 14, a gate insulating film (12, 16) on the channel formation region 14 that is held between the first and second main electrode regions, a main floating electrode 17c provided in a floating state on the gate insulating film, a fixed potential electrode 17o disposed adjacent to the main floating electrode 17c and set to have a first potential, a vibration film 23 facing the first and fixed potential electrodes through a vibration cavity, and a vibration electrode 25c disposed in contact with an upper surface of the vibration film 23, facing the first and fixed potential electrodes through the vibration cavity, and set to have a second potential.SELECTED DRAWING: Figure 3
Inventors:
TADAKI YOSHITAKA
UMEMURA SHINICHIRO
OOGAYA KAORU
TAKEMOTO YOSHIAKI
UMEMURA SHINICHIRO
OOGAYA KAORU
TAKEMOTO YOSHIAKI
Application Number:
JP2021172667A
Publication Date:
May 08, 2023
Filing Date:
October 21, 2021
Export Citation:
Assignee:
MEMS CORE CO LTD
International Classes:
H04R19/00
Attorney, Agent or Firm:
Rukiya Anpo
Suzuki Isohei
Kenji Saito
Suzuki Isohei
Kenji Saito