To provide an AlGaInP light emitting diode device having improved emission intensity.
The AlGaInP is provided with a semiconductor substrate, a reemission layer, an AlGaInP layer having first dope concentration, an AlGaInP lower cladding layer having second dope concentration being lower than the first dope concentration, an undoped AlGaInP active layer, an AlGaInP upper cladding layer, a window layer, an annular upper electrode on the window layer, and a lower laminar bottom electrode on the semiconductor substrate. The remission layer is provided with at least a first region formed by one reemission layer, and a second region for surrounding the first region while being formed by Al2O3. The first dope concentration in the AlGaInP layer between the AlGaInP lower cladding layer and the reemission layer is higher than the second dope concentration of the AlGaInP lower cladding layer, the AlGaInP layer provides a sideways continuity capacity, and the second region of Al2O3 completely reflects rays being applied on the second region.
SHU IRIN
EKI DAIKAN
Hideo Sugiyama
Koichi Yuda
Uozumi Takahiro
Naohiko Teshima
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