Title:
ALUMINUM ALLOY THIN FILM, WIRING CIRCUIT HAVING THE SAME THIN FILM, AND TARGET MATERIAL DEPOSITING THE THIN FILM
Document Type and Number:
Japanese Patent JP2003089864
Kind Code:
A
Abstract:
To provide an aluminum alloy thin film which has an electrode potential equal to that of an ITO (indium-tin-oxide) film, has no diffusion of silicon, has low specific resistance, and has excellent heat resistance.
The carbon-containing aluminum alloy thin film has a composition containing, by atom, 0.5 to 7.0% of at least one or more kinds of elements selected from nickel, cobalt and iron, and 0.1 to 3.0% carbon, and the balance aluminum. The aluminum alloy thin film further contains 0.5 to 2.0% silicon.
More Like This:
Inventors:
KUBOTA TAKASHI
WATANABE HIROSHI
WATANABE HIROSHI
Application Number:
JP2001283306A
Publication Date:
March 28, 2003
Filing Date:
September 18, 2001
Export Citation:
Assignee:
MITSUI MINING & SMELTING CO
International Classes:
G02F1/1343; C22C21/00; C23C14/14; C23C14/18; C23C14/34; G02F1/1368; H01L21/28; H01L21/285; H01L21/3205; H01L23/52; H01L29/45; H01L29/49; H05K1/09; (IPC1-7): C23C14/14; C22C21/00; C23C14/34; G02F1/1343; G02F1/1368; H01L21/285; H01L21/3205
Attorney, Agent or Firm:
Daisuke Tanaka