PURPOSE: To prevent generation of charge-up and to prevent strain of an aperture by forming a film containing a metal element of high electric conductivity and thermal conductivity all over an aperture surface.

CONSTITUTION: A pattern 6 is formed on an Si substrate 1 on the opposite side of an opening part 3 for etching. In the process, a pattern is formed in advance by enlarging a width thereof by a thickness of a film 7 containing a metal element which is formed in a following process. Then, an Si substrate 2 is etched and a resist pattern is removed thereafter. A film containing a metal element is formed in a surface of the aperture. As for a material of the film, tungsten (W) is used. Tungsten has high electric conductivity and high heat conductivity when compared to Si and has equivalent linear expansion coefficient as Si.