To provide a substrate drying apparatus which will not generate organic contamination, disperses with liquid waste disposal, and prevents formation of a water mark and growth of a natural oxide film, while fully drying the substrate.

Flow rate of N2 gas supplied to a chamber 2 is switched to a high flow rate, and wafers 100 held in a carrier 4 are introduced to a processing vessel 3 and are cleaned with deionized water. A halogen lamp 7 is turned on to have infrared light of a wavelength range of 1.3 μm-3.0 μm irradiated on the gas-liquid interface in the processing vessel 3. The carrier 4 is lifted with a constant rate to gradually lift the wafers 100 from the deionized water inside the processing vessel 3. In this instance, the flow rate of the N2 gas is kept at a high flow rate, and surfaces of the wafers 100 are dried by irradiating the part of the wafers 100 appearing from the deionized water inside the processing vessel 3 to the N2 gas atmosphere with the infrared light generated by the halogen lamp 7.