Title:
APPARATUS FOR EPITAXIAL VAPOR DEPOSITION
Document Type and Number:
Japanese Patent JPS59195598
Kind Code:
A
Abstract:
PURPOSE:To make the exchange of a vapor depositing material in a short time unnecessary even with rapid vaporization of the material by forming the vapor depositing material into a block when the crystal of the depositing material is grown by an epitaxial growth on a substrate as a film. CONSTITUTION:The vapor depositing material as a molecular beam source is not used in the form of small pieces and granules as before, but used in the form of a block which is packed directly into a crucible. A rod-shaped block 9 consisting of polycrystalline As, for example, is packed into a crucible 7. In this way, a large quantity of the vapor depositing material can be packed in a crucible having the same volume, and the consumption time of the vapor depositing material is made longer as much. Consequently, the time needed for the exchange, the stopping time of the vapor depositing operation while exchanging, and an evacuating operation after exchanging can be reduced.
Inventors:
TANAKA HARUO
Application Number:
JP6883783A
Publication Date:
November 06, 1984
Filing Date:
April 18, 1983
Export Citation:
Assignee:
ROHM KK
International Classes:
C30B23/08; C30B23/06; H01L21/203; H01L21/205; (IPC1-7): C30B25/06; H01L21/205
Domestic Patent References:
| JPS50344A | 1975-01-06 |
Attorney, Agent or Firm:
Nakazawa Sanosuke