APPARATUS FOR FORMING THIN FILM AND METHOD FOR FORMING THIN FILM USING IT

Japanese Patent JP2001342558

A

To provide an apparatus for forming a thin ferroelectric film suitable for an infrared sensing element with high sensitivity and provide a method for forming a thin film using the apparatus.

The device 1000 for forming the thin film comprises a vacuum vessel 10, a target holding block 12 held in the vacuum vessel as to be movable, a target 20 including a film forming material, an ArF excimer laser 30 for irradiating a high-energy radiation on the surface of the target 20, an optical system for condensing the radiation from the excimer laser to the surface of the target 20, a substrate holding block 50 for holding a substrate 40, an oxidizing gas introduction part 60 for introducing oxidizing gas into the vacuum vessel 10 for oxidizing substances accumulated on the substrate 40, a heater 70 for heating the substrate in the vacuum vessel 10 provided in the substrate holding block, and a light 80 for irradiating a light beam to the substrate 40 held by the substrate holding block 50.

HASHIMOTO KAZUHIKO
MUKOUGAWA TOMONORI
KUBO RYUICHI
KISHIHARA HIROYUKI
USUKI TATSURO
NODA MINORU
OKUYAMA MASANORI

JP2000164921A

December 14, 2001

June 01, 2000

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MATSUSHITA ELECTRIC IND CO LTD
HOCHIKI CO
MURATA MANUFACTURING CO
SHIMADZU CORP
SANYO ELECTRIC CO
OKUYAMA MASANORI

C23C14/00; C23C14/04; C23C14/08; C23C14/28; G01J5/48; H01L21/31; G01J1/02; H01L21/316; H01L21/363; H01L21/314; (IPC1-7): C23C14/28; G01J1/02; G01J5/48; H01L21/31; H01L21/363

JPH04311561A	1992-11-04
JPH0870144A	1996-03-12
JPH01309956A	1989-12-14
JPH04214008A	1992-08-05
JPH08264525A	1996-10-11
JPH03174306A	1991-07-29

Fukami Hisaro (3 outside)

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