Title:
APPARATUS FOR GROWING SEMICONDUCTOR SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPH04124083
Kind Code:
A
Abstract:
PURPOSE:To prevent the deposition of material evaporated from molten liquid on the surface of a cooling cylinder by pulling up a single crystal while passing a hot inert gas along the inner and outer surfaces of a cooling cylinder placed around the single crystal. CONSTITUTION:A single crystal 5 is pulled up from a molten liquid 4 in a crucible 2 placed above a suscepter 3. At the same time, an inert gas heated with a heater 12 is introduced from an introduction port 11, passed from above along the inner and outer faces of a cooling cylinder 6 placed around the single crystal 5 and sucked together with the material evaporated from the molten liquid 4 with a vacuum pump 16.
Inventors:
KANEDA HIROSHI
NISHIZAKI KATSUMI
ECHIZENYA KAZUHIKO
SEKINE TERUYUKI
NISHIZAKI KATSUMI
ECHIZENYA KAZUHIKO
SEKINE TERUYUKI
Application Number:
JP24121590A
Publication Date:
April 24, 1992
Filing Date:
September 13, 1990
Export Citation:
Assignee:
KAWASAKI STEEL CO
International Classes:
C30B15/00; (IPC1-7): C30B15/00
Attorney, Agent or Firm:
Yoshio Kosugi