Title:
APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE AND LOAD LOCK CHAMBER, AND MANUFACTURE OF SEMICONDUCTOR DEVICE USING SUCH APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3186262
Kind Code:
B2
Abstract:
PURPOSE: To provide a heat-treatment apparatus which is capable of eliminating the adverse effect by residual oxygen, and apparatus for manufacturing semicon ductor devices or a load lock chamber, and a method for treating thin films using such heat-treatment apparatus and the like.
CONSTITUTION: The heat-treatment apparatus comprises an oxygen monitor 14. The apparatus for manufacturing semiconductor devices comprises the heat- treatment apparatus comprising the oxygen monitor 14, and a load lock chamber 5 comprising an oxygen monitor 15. The method for treating thin films is that after the heat-treatment apparatus is evacuated, the oxygen concentration in the heat-treatment apparatus is measured by the oxygen monitor, and after the oxygen concentration becomes lower than a predetermined value, a semiconductor substrate is inserted into the heat-treatment apparatus for a thin film treatment on the semiconductor substrate.
Inventors:
Masaki Saito
Application Number:
JP30063092A
Publication Date:
July 11, 2001
Filing Date:
October 14, 1992
Export Citation:
Assignee:
ソニー株式会社
International Classes:
C23C16/44; H01L21/205; C23C16/54; H01L21/31; (IPC1-7): H01L21/205
Domestic Patent References:
| JP6286727A | ||||
| JP63220517A | ||||
| JP63313823A | ||||
| JP1313929A | ||||
| JP4280626A |
Attorney, Agent or Firm:
Takahisa Yamamoto