Title:
APPARATUS AND METHOD FOR CUTTING SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JP3918216
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To simply and accurately cut a single crystal wafer at a surface having a desired crystal orientation and to reduce loss of a single crystal material by detecting the orientation of the crystal from a deviation of a reflected light of a laser beam from an emitted beam, and deciding a cutting direction.
SOLUTION: An He-Ne laser beam (laser beam) 8 having about several mW and satisfactory directivity with a spreading angle of 3" or less is incident to a plane mirror 9, and position and direction of a laser beam oscillator 10 are regulated so that its reflected beam is returned to an emitting port 14. A single crystal ingot 12 is installed in a work holder 11 while the emitting direction of the beam 8 remains fixed, and the beam 8 is reflected on a crystal habit surfaces 5. The reflected beam is projected to a screen 13 parallel to a base 7, and an angle (θ) of the reflected beam and a position on the screen are measured. Here, a distance from the port 14 to the surface 5 is about 1m, the θ is about 3°, it is regulated so that a deviation of a reflected beam spot 15 becomes at a position of about 10.5cm in a horizontal direction, and cut.
Inventors:
Meiwa Tanaka
Application Number:
JP171997A
Publication Date:
May 23, 2007
Filing Date:
January 08, 1997
Export Citation:
Assignee:
Sumitomo Metal Mining Co., Ltd.
International Classes:
B23Q17/24; B28D5/04; H01L21/304; (IPC1-7): B28D5/04; B23Q17/24; H01L21/304
Domestic Patent References:
| JP58046153U | ||||
| JP53008374A | ||||
| JP7149598A | ||||
| JP5186205A | ||||
| JP4113619A | ||||
| JP10119032A | ||||
| JP62188325A | ||||
| JP64003064Y2 |
Attorney, Agent or Firm:
Kameda Tetsuaki