To solve the problem that it is difficult to set a time delay by the influence of the characteristic variation of a voltage drive type semiconductor device or a temperature characteristic since the switching of a drive is carried out by a plurality of drive circuits in the driving device of a conventional voltage drive type semiconductor element.
A driving device 10 of a voltage drive type semiconductor device of such an insulated gate bipolar transistor, as IGBT 1 detects the modulus dVge/dt of the time variation of the gate voltage Vge of this IGBT 1 at the time of turning on of the IGBT 1, and performs the drive control of the IGBT1 based on the detected modules dVge/dt of the time variation. At the time of the above turning on, a first zone S1 where the modulus dVge/dt of the time variation of the gate voltage Vge becomes one or more threshold values Vth 1 and a second zone S2 where the modulus dVge/dt of the time variation of the gate voltage Vge becomes less than one threshold Vth 1 exists continued to the first zone S1. It is controlled so that the gate resistance value r in the second zone S2 may get lower values than the gate resistance value r in the first zone S1.
YAMAWAKI HIDEO
SUZUKI MASARU
Next Patent: IMAGE CLASSIFICATION FILE SYSTEM OF IMAGING EQUIPMENT