To provide an apparatus for forming a deposition film which has superior uniformity of film thickness and film quality, and further provides reduced image defects, with a plasma-CVD method, and to provide a method therefor.
The apparatus for forming the deposition film by the plasma-CVD comprises at least a reaction container which can be vacuum-airtight, a means for mounting a support for forming the deposition film in the reaction container, a source-gas introduction pipe, a high-frequency wave energy introduction means, and a means for exhausting air from the reaction container to make it vacuum. The several supports are arranged on the circumference of a support-mounting circle; the source-gas introduction pipe is arranged on the circumference or the outside of the support-arranging circle, so that a direction of a blown gas from a gas exhaust nozzle formed in the source gas introduction pipe is directed toward the direction which does not intersect the support; and the most inner point of an exhausting outlet is arranged so as to be located on the circumference or in the outside of a circle of connecting most external points of the supports.
UEDA SHIGENORI
AOKI MAKOTO
Katsuhiro Ito
Ishibashi Masayuki
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