To deposit film on a low heat resistant material such as resin substrate by using an ionized film deposition method independently of the material of the substrate.
The film deposition system has a film deposition chamber 1 having an exhaust system, a gas-introducing means 5 for introducing process gas into the film deposition chamber 1, and a target 2 arranged in the film deposition chamber 1, and particles sputtered from the target 2 are deposited onto the surface of a substrate 7. Moreover, this apparatus has an ionization mechanism 6 for ionizing the sputtered particles and a leading-in electrode 10 for forming an electric field so that the ionized particles can be made incident upon the substrate 7 efficiently, and further, a thermal shield structure 60g is provided in order to prevent the direct radiation of heat generated from the ionization mechanism 6 to the substrate 7. Because the rise in the temperature of the substrate 7 on which the ionized particles are to be deposited can be suppressed with certainty, film deposition onto the substrate having low heat resistance temperature is made possible.
YAMAGUCHI HIROTO
KOIKE ATSUSHI
KANAI MASAHIRO
