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Title:
APPARATUS AND METHOD FOR MANUFACTURING DIAMOND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3177305
Kind Code:
B2
Abstract:

PURPOSE: To vapor-deposit a diamond or diamond-like coating doped with desired dopant on a substrate by separately pulse-controlling the duration times of a donor arc-beam and an acceptor arc-beam.
CONSTITUTION: The system has a vacuum reactor chamber 32 having a main plasma arc gun 36 for generating a mean beam 34. The doping is made by a donor plasma arc gun 40 and acceptor arc gun 42. Both guns 40, 42 generate a donor beam 48 and acceptor beam 50 directed on the respective substrates mounted on holders 54 and are independently operated by an electric device. A time measuring oscillator 54 gives limited outputs to a donor control electric device 58 for operating the donor gun 40, the donor gun re-igniter 62 and the donor control adjuster 66. A similar circuit including an acceptor control electronic device 60 operates the acceptor gun 42.


Inventors:
Alvin A. Snapper
Charles W. Benfield
Application Number:
JP19155192A
Publication Date:
June 18, 2001
Filing Date:
June 25, 1992
Export Citation:
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Assignee:
Alvin Allin Snapper
International Classes:
C30B23/00; H01L21/02; H01L21/203; H01L21/336; H01L29/78; H01L33/28; H01L33/34; H01L33/44; H01S5/00; H01S5/042; (IPC1-7): H01L21/203; C30B23/00
Domestic Patent References:
JP1164796A
JP6153719A
Attorney, Agent or Firm:
Hideo Takino (1 outside)