Title:
APPARATUS FOR PRODUCING COMPOUND SEMICONDUCTOR CRYSTAL AND METHOD THEREFOR
Document Type and Number:
Japanese Patent JPH05880
Kind Code:
A
Abstract:
PURPOSE:To grow the crystal under high resistance without addition of impurities an with decreased generation of crystal defects, such as twins and lineage, and to easily obtain a circular wafer by sliding the crystal. CONSTITUTION:A GaAs seed crystal 3 worked in such a manner that the <100> direction is in the longitudinal direction of a boat is set in the prescribed position of the boat 1 which is open on a tail side and is arc-shaped in the sectional shape perpendicular to the longitudinal direction. Prescribed amts. of Ga and B2O3 are put into the boat 1. A tail part cap 2 is fitted into the prescribed position. As is put into the other end of a reaction vessel and the boat is installed in the reaction vessel. The pressure is reduced to a vacuum state to completely seal the reaction vessel. The reaction vessel is put into a crystal growth furnace and while the crystal is observed from above the boat, the crystal is grown. The cap is removed after the growth and the GaAs single crystal is taken out of the open part without breaking the boat. This crystal has no twin defects and has the non-added semi-insulating characteristic having <=2000/cm<2> EPD.
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Inventors:
MURATA KOICHI
ISHIHARA TOMOYUKI
SATO MAKOTO
ISHIHARA TOMOYUKI
SATO MAKOTO
Application Number:
JP17453491A
Publication Date:
January 08, 1993
Filing Date:
June 19, 1991
Export Citation:
Assignee:
ASAHI GLASS CO LTD
International Classes:
C30B11/00; H01L21/208; (IPC1-7): C30B11/00; H01L21/208
Attorney, Agent or Firm:
Kenji Izumina
Next Patent: JPH05881