To provide an apparatus for producing a silicon carbide single crystal which can grow a high quality silicon carbide single crystal free from crystal defects by suitably suppressing the influence of the thermal stress acting on the seed crystal regardless of the size of the silicon carbide single crystal to be grown.

The apparatus for producing a silicon carbide single crystal is provided with a reaction vessel 10 and a holding rod 30 and a holding wire 31 for holding a seed crystal 20 that is subjected to the growth of a silicon carbide single crystal. In the center part of the rear side of the seed crystal 20, there is provided with a cylinder-shaped recess 21 that has a smaller area than that of the whole of the rear side. The holding rod 30 is formed so as to be smaller than the recess 21 and connected to the seed crystal 20 by fitting into the recess 21 having been applied with an adhesive.