Title:
APPARATUS FOR PRODUCING SILICON SINGLE CRYSTAL AND METHOD THEREFOR
Document Type and Number:
Japanese Patent JP2567312
Kind Code:
B2
Abstract:
PURPOSE: To solve imperfect melting of granular silicon in a raw material melting part, solidification of silicon melt liquid and clogging of raw material feed tube in a production apparatus by conventional CZ method.
CONSTITUTION: In a production apparatus of a silicon single crystal by CZ method dividing a silicon melt 7 into a single crystal growing part 13 and a raw material melting part 12 in a quartz crucible 1 having a partition member 8 with a small hole 10 capable of communicating the silicon melt, a flange 21 horizontal to the face of the silicon melt 7 projected upward from the partition member 8 and a raw material feed tube 14 for continuously feeding granular silicon to the raw material melting part 12, the production apparatus is constituted so that distance between the upper end of the partition member 8 and the lower face of the flange 21 may become 1.5-3.0mm and height of the lower end of the raw material feed tube 14 and face of the silicon melt 7 becomes 10-100mm. The objective method for producing the silicon single crystal is characterized by charging the granular silicon in the same direction as rotation direction of the quartz crucible 1.
Inventors:
NAKAHAMA YASUMITSU
SUGITA HARUHIKO
SUZUKI MAKOTO
SHIMA YOSHINOBU
SUGITA HARUHIKO
SUZUKI MAKOTO
SHIMA YOSHINOBU
Application Number:
JP26248891A
Publication Date:
December 25, 1996
Filing Date:
October 11, 1991
Export Citation:
Assignee:
TOSHIBA CERAMICS CO
International Classes:
C30B15/02; C30B29/06; (IPC1-7): C30B15/02; C30B29/06
Domestic Patent References:
| JP312386A | ||||
| JP1148792A | ||||
| JP218376A | ||||
| JP3164493A |
Attorney, Agent or Firm:
Muneharu Sasaki (3 outside)