To provide an aqueous dispersant for chemical mechanical polishing which can efficiently remove barrier metal layers and cap layers by polishing and, at the same time, with which a chemical mechanical polishing process that can reduce the damages given to the material of an underlaying insulating film having a low dielectric constant, and to provide a method for chemical mechanical polishing which uses the aqueous dispersant.
The aqueous dispersant for chemical mechanical polishing contains (A1) first fumed silica, having a specific surface area of ≥10 m2/g and <160 m2/g and a mean secondary particle diameter of 170-250 nm and (A2) second fumed silica, having a specific surface area of ≥160 m2/g and a mean secondary particle diameter of ≥50 nm and <170 nm. In the method for chemical mechanical polishing, the object to be polished having a metallic layer, a barrier metal layer, and a specific insulating layer is chemically mechanically polished by using the aqueous dispersant for chemical mechanical polishing.
HATTORI MASAYUKI
KAWAHASHI NOBUO
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