To provide an aqueous dispersion for chemically machine polishing that can polish the processed membranes in the semiconductor devices at a sufficient speed, particularly in the polishing of copper membranes.
This chemically machine-polishing aqueous dispersion comprises 0.07-2.1 mass %, preferably 0.21-2.1 mass % of ammonium malonate, 0.1-1.1 mass %, preferably 0.15-0.6 mass %, particularly 0.25-0.45 mass % of hydrogen peroxide, abrasive grains, and water and the pH is adjusted to 5-12, preferably 7-11 and particularly 7.5-10. As abrasive grains, are cited inorganic particles, for example, silica or alumina, organic particles, for example, polystyrene, poly(methyl methacrylate) and the like, composite particles formed by bonding these organic particles to the polycondensate of polysiloxane, composite particles prepared by electrostatically integrating inorganic particles and organic particles having different signal ι-potentials, and the like.
| JP2005144377 | SUPERSONIC CLEANING HORN |
| JPH10178088 | SUBSTRATE-CHUCKING DEVICE |
| JP2001054854 | CARRIER HEAD HAVING PRESSABLE BAG TYPE PART |
HATTORI MASAYUKI
KAWAHASHI NOBUO
