PURPOSE: To execute high-speed ashing of a film deposited on a substrate to be treated by setting the gaseous pressure near the surface of the substrate to be treated under an ashing treatment at 1 to 10ata.
CONSTITUTION: A discharge port 16 for discharging the exhaust gas after the ashing treatment from an inside reaction chamber 15 enclosed by an upper chamber 2 and a lower chamber 1 is provided to the bottom of the lower chamber 1 and is piped to a discharge mechanism 17; further, a communicating port 19 communicated with a pressure control mechanism 18 is provided to, for example, the side wall of the lower chamber 1. The gaseous pressure near the surface of the substrate 9 to be treated during the ashing treatment is set at 1 to 10ata. The density of the treating gas near the surface of the substrate 9, therefore, increases and the flow rate of the treating gas flowing along the surface of the substrate 9 near the surface of the substrate 9 decreases. The high-speed ashing is executed in this way.
KAMIKAWA YUJI
NOMURA MASAFUMI
| JPS61223839A | 1986-10-04 |