PURPOSE: To improve the ashing rate by adding water to a gas containing oxygen, changing the gas into plasma and conducting downstream ashing.
CONSTITUTION: The mixed gas of water and oxygen is used as a reaction gas, the reaction gas is turned into plasma, and downstream ashing is performed. That is, a semiconductor wafer 7 to be treated is placed onto a stage 6, the temperature of the semiconductor wafer 7 is kept at 200°C by using a heater 61, the internal pressure of a device is decompressed once and the inside is cleaned, oxygen containing water at a desired mixing ratio is fed through a reaction-gas supply pipe 3, and the internal pressure of the device is in creased and electromagnetic waves are supplied, thus generating plasma. Consequently, active species formed in plasma are fed into a reaction chamber 5, and brought into contact with the semiconductor wafer 7 in the reaction chamber 5 and an ashing reaction is generated. Accordingly, an ashing rate in the ashing reaction is accelerated extremely.
SHINAGAWA KEISUKE
ABE NAOMICHI
| JPS6016424A | 1985-01-28 | |||
| JPS5621333A | 1981-02-27 | |||
| JPS63216346A | 1988-09-08 |