PURPOSE: To reduce thermal stress which is the cause of the generation of cracking in the process of sputtering in a backing plate of a planer type target used for a sputtering apparatus.

CONSTITUTION: A planer type target in which the coefficient of linear expansion is regulated to the value relatively close to that of a film forming metallic material 2, i.e., the coefficient of linear expansion of the backing plate 1 is regulated to the range of ±70% of that of the film forming metallic material 2 is prepd. Thermal stress generated on a target is reduced compared to the conventional case in which the backing plate is made of Cu, and the generation of cracking on the target is hard to occur.