BACKSCATTERING METHOD FOR GLANCING ION BEAM

Title:

BACKSCATTERING METHOD FOR GLANCING ION BEAM

Document Type and Number:

Japanese Patent JPS595625

Kind Code:

A

Abstract:

PURPOSE:To improve a depth resolution by irradiating ion beams to the surface of a solid, detecting the number of ions scattered and the energy of the scattered ions and limiting the incident direction of ions to approximately single direction. CONSTITUTION:Helium ions are radiated at the speed of 330keV from an ion beam radiator 5, and irradiated to the solid to be measured 1. A diameter of ion beams 2 shall be approximately 1mm.. A semiconductor detector 41, an incident window thereof takes a rectangular shape with the size of 1mm.X7mm., is set up at a position where the detector is separated from a point of irradiation by 62mm. and a scattering angle is 95 deg., and receives scattered ions. The detector 41 shall have one with a circular incident window, the variance of a scattering angle is inhibited within 0.46 deg., the variance of an S-factor is inhibited within a range of +9.2%--8.17%, and the method is improved remarkably more than conventional techniuqe.

Inventors:

TATSUTA SHIGERU
NISHI HIDETOSHI

Application Number:

JP11511682A

Publication Date:

January 12, 1984

Filing Date:

July 01, 1982

Export Citation:

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Assignee:

FUJITSU LTD

International Classes:

H01L21/265; (IPC1-7): H01J37/00

Attorney, Agent or Firm:

Koshiro Matsuoka

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