Title:
BONDING METHOD FOR SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JPH01270281
Kind Code:
A
Abstract:
PURPOSE:To eliminate the distortion of a substrate, and enable the sure element isolation without lacking elements, by injecting adhesive agent, from which bubbles are eliminated, between the substrate and an insulative retaining plate, by the effect of surface tension. CONSTITUTION:In the vicinity of a substrate 12 mounted on an insulative retaining plate 11, adhesive agent, from which bubbles are previously eliminated, is arranged, and, by the effect of the surface tension of the adhesive agent 13, the adhesive agent 13 is injected between the substrate 12 and the retaining plate 11. As a result, the inclusion of bubbles with the adhesive agent 13 can be evaded. In conventional art, the inclusion occurs when the adhesive agent 13 is spread on the retaining plate 11 with a brush, or when the substrate 12 is put on the adhesive agent 13 spread on the retaining plate 11, and bonded to the retaining plate. Thereby, at the time of element isolation of the substrate 12, a problem that elements are lacked by the permeating of etching liquid due to the bubbles is solved.
Inventors:
UEDA TOSHIYUKI
MAEKAWA TORU
MAEKAWA TORU
Application Number:
JP9967088A
Publication Date:
October 27, 1989
Filing Date:
April 21, 1988
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L31/0264; H01L31/08; (IPC1-7): H01L31/08
Attorney, Agent or Firm:
Sadaichi Igita