Title:
静電容量型センサ及びその製造方法
Document Type and Number:
Japanese Patent JP5177311
Kind Code:
B1
Abstract:
A capacitance type sensor has a semiconductor substrate having a vertically opened penetration hole, a movable electrode film arranged above the penetration hole such that a periphery portion opposes to a top surface of the semiconductor substrate with a gap provided, and a fixed electrode film arranged above the movable electrode film with a gap with respect to the movable electrode film. A concave portion having at least a part thereof formed by an inclined surface is provided in the top surface of the semiconductor substrate in a region of the top surface of the semiconductor substrate which overlaps the periphery portion of the movable electrode film.
Inventors:
Yusuke Nakagawa
Takashi Kasai
Yoshitaka Tada
Takashi Kasai
Yoshitaka Tada
Application Number:
JP2012031055A
Publication Date:
April 03, 2013
Filing Date:
February 15, 2012
Export Citation:
Assignee:
OMRON Corporation
International Classes:
H04R31/00; B81B3/00; B81C1/00; H04R19/04
Domestic Patent References:
| JP2010034641A | ||||
| JP2008098524A | ||||
| JP2006157863A |
Attorney, Agent or Firm:
Masafusa Nakano