To provide a capacitor of a semiconductor device and its fabricating method.

The capacitor comprises an interlayer insulation film pattern arranged on a semiconductor substrate having an opening for exposing the upper surface of the semiconductor substrate, a silicide pattern formed on the semiconductor substrate exposed through the opening, and a lower electrode covering the inner wall of the opening where the silicide pattern is formed. The inner wall and upper surface of the lower electrode are coated with a dielectric film on which an upper electrode is arranged. An insulation film having high permittivity, e.g. a tantalum oxide film, is preferably employed as the dielectric film. The method for fabricating the capacitor comprises steps for forming an interlayer insulation film pattern on a semiconductor substrate having an opening for exposing the upper surface of the semiconductor substrate, for forming a silicide pattern on the exposed semiconductor substrate, for forming a lower electrode covering the inner wall of the opening where the silicide pattern is formed, and for forming a dielectric film and an upper electrode film sequentially thereon.