To provide a structure suitable for forming a capacitor that contains a capacitor dielectric material arranged on the surface of an electrode, and to provide a method for forming such a structure.
The capacitor has the structure comprising an electrode with a primary surface 1 and secondary surface 5 and capacitor dielectric material 2 arranged on the surface of the primary surface of the electrode, where the primary surface of the electrode has the Ra value of no more than 200 nm, the Rz (din) value of no more than 2,000 nm and the W value of no more than 250 nm. The method for forming the structure of the electrode comprises a process to provide metallic foil having the primary surface, a process to let the metallic foil contact a nickel electroplating bath, and a process to deposit a nickel layer on the primary surface of the metallic foil by impressing sufficient anode potential, where the primary surface of nickel plating has the Ra value of no more than 200 nm, the Rz (din) value of no more than 2,000 nm, and the W value of no more than 250 nm.
RZEZNIK MARIA ANNA
SCHEMENAUR JOHN E
HARIHARAN RAJAN
Koji Hashimoto