PURPOSE: To provide a charge-transfer device which contributes to improved FGA detecting sensitivity used as a signal electric charge detector and also to more sensitive solid-state imaging device.

CONSTITUTION: A charge-coupled device consisting of arrayed multiple transfer electrodes 13 an a semiconductor substrate 10 with a gate insulation film 30 in between, a stray dispersion layer 11 where the signal electric charge transferred from the charge-coupled device is temporarily accumulated, a stray gate electrode 21, provided on the stray dispersion layer 11 with a gate insulation film 30 in between, and a MOS transistor 20 which amplifies and outputs the voltage signal generated at the stray gate electrode 21 are provided to an electric charge transferring device. In this device, the gate insulation film 30 at the charge coupled device part is formed of three layers, SiO2/SiN/SiO2 layers, further, the film thickness of the gate insulation film of the stray dispersion layer 11 is made to be thinner than that of the charge coupled device's gate insulation film.