Title:
CHARGE TRANSFERRING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS52152130
Kind Code:
A
Abstract:
PURPOSE: Signal charge is injected into a plural number of channels in the state of sequentially staggered phases to make high integration possible, thereby realizing the charge transferring semiconductor device which is small and has a large scale memory.
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Inventors:
ISHIHARA YASUO
HOGARI YASUAKI
HOGARI YASUAKI
Application Number:
JP7005676A
Publication Date:
December 17, 1977
Filing Date:
June 14, 1976
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
G11C27/04; G11C19/28; H03H11/26; (IPC1-7): G11C5/00; G11C11/34; G11C19/28; G11C21/00; H03H9/30