Title:
CHARGED BEAM EXPOSURE METHOD
Document Type and Number:
Japanese Patent JPS61202430
Kind Code:
A
Abstract:
PURPOSE:To reduce the dimensional error of a pattern by auxiliarily emitting an electron beam in the less amount than a beam emission amount necessary to form the pattern on the prescribed region before or after the normal electron beam exposure. CONSTITUTION:A pattern forming region is selectively exposed with a charged beam 21 of 30kV or more of an accelerating voltage in the beam emission amount D0 to form a selective pattern. In this case, at least the periphery of the pattern forming region is emitted in the less amount than a beam emission amount D1 to form the pattern with charged beam 22 before, after the step or during the step. Thus, the dimensional error of the pattern can be reduced.
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Inventors:
NISHIMURA EIJI
KATO YOSHIHIDE
TAKIGAWA TADAHIRO
KATO YOSHIHIDE
TAKIGAWA TADAHIRO
Application Number:
JP4344885A
Publication Date:
September 08, 1986
Filing Date:
March 05, 1985
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L21/027; G03F7/20; H01J37/317; (IPC1-7): H01L21/30
Domestic Patent References:
| JPS59921A | 1984-01-06 | |||
| JPS52117077A | 1977-10-01 | |||
| JPS58147117A | 1983-09-01 |
Attorney, Agent or Firm:
Takehiko Suzue