To provide two types of aggregates of linear protrusions which have a large contrast in secondary electron images acquired when irradiate with an electron beam and which intersect each other at right angles, and to provide a size calibration sample for scanning electron microscopes that use the same.
A crystal face of a (100) face single crystal silicon substrate is used to form an upper surface of a linear pattern, and (111) plane are used to form sidewalls, having acute angles to the upper surface to form a linear protrusion structure in parallel with or perpendicular to a 011 axis. A cross section, in parallel with the upper surface of the protrusion structure, is formed in such a way as to have an inverted taper structure having a decreasing width starting from the upper surface to a bottom part. A large contrast of secondary electron images acquired, from the boundaries of the two types of linear protrusions which intersect each other at right angles can be set, and accurate calibration can be carried out in the two directions of vertical and lateral directions.
MORIOKA TOMONARI
NAKAJIMA KATSUNORI
UKAI SEIICHI
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