Title:
荷電粒子ビーム照射装置
Document Type and Number:
Japanese Patent JP6973072
Kind Code:
B2
Abstract:
An electron beam exposure apparatus (100) which exposes a wafer (W) coated with an electron beam resist with an electron beam is equipped with: a stage (22) that can be moved holding the wafer (W); an electron beam optical system (32) that irradiates the wafer (W) with an electron beam; and, an opening member (16), placed facing the wafer (W) via a predetermined gap on the wafer (W) side in the optical arrangement direction of the electron beam optical system, and having an opening through which the electron beam from the electron beam optical system (32) passes.
Inventors:
Yuichi Shibasaki
Application Number:
JP2017523634A
Publication Date:
November 24, 2021
Filing Date:
June 07, 2016
Export Citation:
Assignee:
NIKON CORPORATION
International Classes:
H01L21/027; G03F7/20; H01J37/09; H01J37/147; H01J37/20; H01J37/244; H01J37/305
Domestic Patent References:
| JP57046856U | ||||
| JP2236939A | ||||
| JP2001319853A | ||||
| JP2004152505A | ||||
| JP2012160267A |
Attorney, Agent or Firm:
Nishizawa Kazumi
Kazunori Onami
Junichi Kobayashi
Kazunori Onami
Junichi Kobayashi
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