CHEMICAL AMPLIFICATION TYPE RESIST COMPOSITION AND PATTERN FORMING METHOD USING SAME

Japanese Patent JP2004102264

A

To provide a chemical amplification type resist composition which exhibits sufficient transmissivity when an exposure light source for F2 excimer laser light (157 nm) is used, has a fast etching speed, and improves roughness of a sample surface after dry etching, and to provide a pattern forming method using the same.

Disclosed are the chemical amplification type resist composition, containing (a) a resin which contains a repetitive unit having a specified partial structure at a side chain and increases in solubility for an alkali liquid developer through the operation of acid, (b) a compound which generates acid by irradiation with an active light beam or radiation, (c) a low-molecule compound of ≤3,000 in molecular weight such that a value found by a calculation expression (1) of [carbon atomic number-oxygen atomic number-0.5 × fluorine atomic number] / total atomic number is 0.1 to 0.5, and (1) and (d) a solvent, and the pattern forming method using the same.

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KANNA SHINICHI
MIZUTANI KAZUYOSHI
SASAKI TOMOYA

JP2003294268A

April 02, 2004

August 18, 2003

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FUJI PHOTO FILM CO LTD

G03F7/039; C08F10/14; C08F12/34; C08F16/24; C08F20/18; C08F32/00; G03F7/004; H01L21/027; (IPC1-7): G03F7/039; C08F10/14; C08F12/34; C08F16/24; C08F20/18; C08F32/00; G03F7/004; H01L21/027

Shohei Oguri
Hironori Honda
Toshimitsu Ichikawa
Takeshi Takamatsu
Yuriko Hamada

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