To provide a chemical machine polishing device having a polishing cloth which can array out a planning process requiring no dressing process, and suppressing the generation of microscratch.

The main part of a chemical machine polishing device is composed o a polishing surface plate setting a polishing cloth 101; a holding base to hold a processed substrate; and a polishing liquid feeder; and on the surface of the polishing cloth 101 set on the polishing surface plate, an uneven part 101a forming numerous truncated conical projections 102 aligned in a delta form, with the height H about 500 μm, and the internal P about 400 μm, is provided. Consequently, the manufacturing yield of a highly integrated semiconductive device using the chemical machine polishing device in the planning processing is improved.