Title:
化学機械研磨用水系分散体および半導体装置の化学機械研磨方法
Document Type and Number:
Japanese Patent JP4614981
Kind Code:
B2
Abstract:
A chemical mechanical polishing aqueous dispersion according to the invention includes (A) 0.1 to 4 mass% of colloidal silica having an average particle diameter of 10 to 100 nm, and (B) 0.1 to 3 mass% of at least one ammonium salt selected from ammonium phosphate, diammonium phosphate, and ammonium hydrogen sulfate, the chemical mechanical polishing aqueous dispersion having a mass ratio (A)/(B) of the component (A) to the component (B) of 1 to 3 and a pH of 4 to 5 and being able to simultaneously polish at least two films that form a polishing target surface and are selected from a polysilicon film, a silicon nitride film, and a silicon oxide film.
Inventors:
Tomoaki Ando
Tomohisa Konno
Tomohisa Konno
Application Number:
JP2007074537A
Publication Date:
January 19, 2011
Filing Date:
March 22, 2007
Export Citation:
Assignee:
JSR CORPORATION
International Classes:
H01L21/304; B24B37/00; B82Y10/00
Domestic Patent References:
| JP2003179009A | ||||
| JP2005277399A | ||||
| JP2004165447A | ||||
| JP2004304016A | ||||
| JP2005183686A |
Attorney, Agent or Firm:
Mitsue Obuchi
Yukio Fuse
Mina Tsuzuki
Yukio Fuse
Mina Tsuzuki