CHEMICAL VAPOR DEPOSITION DEVICE AND MANUFACTURE OF SEMICONDUCTOR DEVICE USING SAME

Japanese Patent JPH06196419

A

PURPOSE: To realize a chemical vapor deposition device, which improves a controllability of the mixing ratio of raw gas to carrier gas and at the same time, is capable of obtaining the stable mixing ratio without changing the mixing ratio by a temperature change in the vicinity of a bomb and a change in the amount of a residual liquid in the bomb.

CONSTITUTION: A chemical vapor deposition device has a raw material container 106 housing a raw material in a liquid state, a raw gas generating container 102 which is introduced the liquid raw material from the container 106, means 103 and 104 for holding the liquid level of the liquid raw material in the container 102 is a constant state, a means for injecting H2 gas for foaming use in the liquid raw material in the container 102 from the outside to generate raw gas and a reaction chamber 101 which is introduced the mixed gas of the raw gas and the foaming gas.

JP2005328081	MANUFACTURING METHOD OF SUBSTRATE TREATMENT DEVICE AND SEMICONDUCTOR DEVICE
JP6545330	Stage, stage manufacturing method

ASABA TETSURO
KAWAKADO YASUSHI
SEKINE YASUHIRO
HAYAKAWA YUKIHIRO
OMI KAZUAKI

JP35727192A

July 15, 1994

December 24, 1992

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CANON KK

H01L21/205; C23C16/04; C23C16/20; C23C16/448; H01L21/20; H01L21/28; H01L21/285; H01L21/31; H01L21/3205; H01L23/52; (IPC1-7): H01L21/205; H01L21/28; H01L21/31; H01L21/3205

Yamashita

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