Title:
加熱触媒体を用いた化学気相堆積方法及び化学気相堆積装置
Document Type and Number:
Japanese Patent JP5049433
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for forming a silicon oxide film by a catalyst CVD method which can ensure a stable catalytic reaction. SOLUTION: The method comprises employing a mixture gas containing N2 O gas and SiH4 gas as source gas, Ir metal as a catalyst body, contacting the mixture gas with Ir metal which is heated to 1,800 deg.C to decompose then, generating radicals or ions of Si or O, and depositing them on a substrate as deposition seeds to form the silicon oxide film.
Inventors:
Yuji Uchiyama
Hisazo Nakamura
Masahiro Hayama
Kazuya Saito
Hisazo Nakamura
Masahiro Hayama
Kazuya Saito
Application Number:
JP2001270385A
Publication Date:
October 17, 2012
Filing Date:
September 06, 2001
Export Citation:
Assignee:
ULVAC, Inc.
International Classes:
B01J23/46; B01J19/00; C23C16/452; B01J35/02; H01L21/31; H01L21/316; H01L21/336; H01L21/768; H01L23/522; H01L23/532; H01L29/786
Domestic Patent References:
| JP63040314A | ||||
| JP2001049436A | ||||
| JP6338491A | ||||
| JP2000150498A |
Attorney, Agent or Firm:
Yoshihiro Shimizu
Shinichi Abe
Yuji Tsujida
Etsuo Machida
Masashi Yoshioka
Shinichi Abe
Yuji Tsujida
Etsuo Machida
Masashi Yoshioka