CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, RESIST FILM USING THE SAME, RESIST COATED MASK BLANK, RESIST PATTERN FORMING METHOD, AND PHOTOMASK

Title:

CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, RESIST FILM USING THE SAME, RESIST COATED MASK BLANK, RESIST PATTERN FORMING METHOD, AND PHOTOMASK

Document Type and Number:

Japanese Patent JP2013156388

Kind Code:

A

Abstract:

To provide: a chemically amplified negative resist composition which can form a pattern simultaneously satisfying high sensitivity, high resolution (e.g., high resolving power, excellent pattern shape, and small line edge roughness (LER)) and satisfactory dry etching resistance, and which has excellent scum characteristics and excellent temporal stability; a resist film using the composition; a resist coated mask blank; a resist pattern forming method; and a photomask.

The chemically amplified negative resist composition contains (A) a compound represented by the specified general formula (I), (B) a compound having a phenolic hydroxyl group, (C) a compound to generate an acid by exposure to an actinic or radioactive ray, and (D) a crosslinking agent. In the general formula (I), each of R₁ to R₅ represents a hydrogen atom or a substituent. Two or more of R₁ to R₅ may be bound to each other to form a ring. A represents a monovalent organic group.

Inventors:

TSUCHIMURA TOMOTAKA
INAZAKI TAKESHI
TSURUTA TAKUYA
TAKAHASHI KOTARO
YAO TADATERU

Application Number:

JP2012015968A

Publication Date:

August 15, 2013

Filing Date:

January 27, 2012

Export Citation:

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Assignee:

FUJIFILM CORP

International Classes:

G03F7/038; C08F12/24; G03F7/004; H01L21/027; C07C309/71; C07C309/73; C07C309/77; C07D217/08; C07D251/70; C07D285/00; C07D295/22; C07D327/08; C07D487/04

Attorney, Agent or Firm:

Takeshi Takamatsu
Toshiyuki Ozawa
Hasegawa Hiromichi

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