To provide a chemically amplified resist composition which exhibits sufficient transparency when using a light source of not more than 160nm, specifically F2 excimer laser beam light (157nm), and which is reduced in increase of particles and fluctuation of sensitivity after aging storage, and to provide its manufacturing method and a pattern forming method using the same.
The chemically amplified resist composition contains (A) a resin which has a structure where a fluorine atom is substituted for a main chain and/or side-chain of a polymer backbone, which is resolved by action of acid as well, and whose solubility to an alkali developer is increased, (B) a chemical compound generating acid by irradiation of active light or radioactive ray, and (C) a solvent, and also the content of metal impurities is made not more than 100ppb. In this invention, the manufacturing method of the composition and pattern forming method using the same are included.
MIZUTANI KAZUYOSHI
SASAKI TOMOYA
Hironori Honda
Toshimitsu Ichikawa
Takeshi Takamatsu
Yuriko Hamada
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