Title:
CHEMICALLY AMPLIFIED RESIST COMPOSITION AND METHOD FOR FORMING PATTERN BY USING THE SAME
Document Type and Number:
Japanese Patent JP2005099276
Kind Code:
A
Abstract:
To provide a resist material which shows sufficient transparency when a light source at ≤160 nm wavelength, specifically F2 excimer laser light (at 157 nm) is used for the manufacture of a semiconductor device, which reduces a pattern dimension by flow baking, and which is easily controlled for the flow amount and a flow figure, and also to provide a method for forming a pattern in the resist material.
The chemically amplified resist composition contains: (A) a resin which has a specified structure and which is decomposed by the effect of an acid to increase its solubility with an alkaline developing solution; (B) a compound which generates an acid by irradiation of active rays or radiation; and (C) a component having a specified structure.
Inventors:
KANNA SHINICHI
Application Number:
JP2003331456A
Publication Date:
April 14, 2005
Filing Date:
September 24, 2003
Export Citation:
Assignee:
FUJI PHOTO FILM CO LTD
International Classes:
G03F7/039; C08F32/02; C08F32/08; G03F7/004; H01L21/027; (IPC1-7): G03F7/039; C08F32/02; C08F32/08; G03F7/004; H01L21/027
Attorney, Agent or Firm:
Shohei Oguri
Hironori Honda
Toshimitsu Ichikawa
Takeshi Takamatsu
Yuriko Hamada
Hironori Honda
Toshimitsu Ichikawa
Takeshi Takamatsu
Yuriko Hamada