化学増幅型レジスト材料

Japanese Patent JP6512994

B2

A chemically amplified resist material is used in a process including: patternwise exposing a predetermined region of a resist material film to a first radioactive ray that is ionizing radiation or nonionizing radiation; floodwise exposing the resist material film to a second radioactive ray that is nonionizing radiation; baking the resist material film; and developing the resist material film to form a resist pattern, the chemically amplified resist material containing (1) a base component that is capable of being made soluble or insoluble in a developer solution by an action of an acid and (2) a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure, wherein the component (2) contains a component (a), any two among components (a) to (c), or all of components (a) to (c), wherein a van der Waals volume of the acid generated from the component (2) is no less than 3.0 x 10 -28 m 3 .

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K. Nakagawa
Naruoka Takehiko
Tomoki Nagai
Seiichi Tagawa
Akihiro Oshima
Seiji Nagahara

JP2015163254A

May 15, 2019

August 20, 2015

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国立大学法人大阪大学
東京エレクトロン株式会社
ＪＳＲ株式会社

G03F7/004; G03F7/039; G03F7/20; G03F7/38

JP2015172741A

WO2015049871A1
WO2014188762A1
WO2014129556A1

Hajime Amano
Yoshinori Ikeda
Hiroshi Ogawa
Koji Ishida
Kazuki Kagami
Kenichi Fujinaka

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