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Title:
CIRCUIT AND SENSOR FOR DETECTING ELECTROMAGNETIC FIELDS CLOSE TO LOW FREQUENCY, AND GAME MACHINE
Document Type and Number:
Japanese Patent JP2010256245
Kind Code:
A
Abstract:

To suppress malfunctions of a proximity switch generated by the approach of electromagnetic field close to a low frequency.

A detection electrode 1 detects an induced voltage generated by an electromagnetic field close to a low frequency, and a coupling circuit 11 connected to the detection electrode in series adjusts the wave height or the level of the induced voltage generated in the detection electrode. The coupling circuit 11 and an LC resonance circuit 12, arranged between a ground potential set a detection allowable frequency of the induced voltage, and a high-frequency oscillation circuit 13 of a current-feedback type oscillates a high-frequency sine wave by an intermediate potential VLC between the coupling circuit 11 and the LC resonance circuit 12. When the electromagnetic field cose to the low frequency is non-irradiated to the detection electrode 1, the high-frequency oscillation circuit 13 set in a negative conductance generating oscillation stop; and when the electromagnetic field near the low frequency is irradiated to the detection electrode 1, the high-frequency oscillation circuit 13 is changed into an oscillation state. The present invention is applicable to game machines.


Inventors:
HATADA MITSUO
AJIOKA TSUTOMU
ISHIBASHI KEISUKE
ISSHIKI NOBUMASA
Application Number:
JP2009108303A
Publication Date:
November 11, 2010
Filing Date:
April 27, 2009
Export Citation:
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Assignee:
OMRON TATEISI ELECTRONICS CO
International Classes:
G01R29/08; A63F7/02
Domestic Patent References:
JP2008003003A2008-01-10
JP2001133493A2001-05-18
JPS5997232A1984-06-05
JP2001120822A2001-05-08
JPH0759929A1995-03-07
JPH11244458A1999-09-14
Attorney, Agent or Firm:
Yoshio Inamoto
Takashi Nishikawa